Elpida Introduces High K Metal Gate Technology for Memory

Elpida, Japan announced today that it will introduce high-k metal gate (HKMG) technology for the first time in the 40nm level DRAM memory manufacturing process for the development of 2Gb DDR2 Mobile DRAM (LPDDR2) mobile memory particles.

HKMG this technology first appeared in the Intel 45nm process, TSMC, GlobalFoundries, etc. are also being applied to their own product line. It uses a high dielectric constant insulating film on the transistor gate to reduce the leakage rate and enhance the transistor performance. It also needs a metal gate electrode as a match.

HKMG technology is widely used in processor manufacturing, but because of the high heat treatment temperature of high-k metal gate formation, and the more complex DRAM memory structure, it has not been able to introduce it into the DRAM manufacturing process.

After working hard, Elpida finally succeeded in reducing the heat treatment temperature and overcoming the complexity of the DRAM structure. Compared to the traditional silicon dioxide dielectric, HKMG technology can reduce the electrical thickness of the gate dielectric in the transistor by about 30% in the new DDR2 Mobile RAM, and increase the current when the transistor is turned on by up to 1.7 times. The current is reduced to the current one percent, which greatly improves performance and significantly reduces power consumption in standby.

Elpida plans to fully apply HKMG technology in its main line of Mobile DRAM mobile memory chips, and continue to evaluate and improve HKMG technology for future use on 30nm and 25nm processes.

Elpida's 40nm+HKMG Mobile DRAM memory chips will be trial-production this year, followed by mass production.